SI4942DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
50
40
30
20
10
0
0.001
Single Pulse Power
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
Limited
by r_DS(on)
10
1 mS
100 600
2
1
Duty Cycle = 0.5
1
T_A = 25_C
Single Pulse
0.1
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
10 mS
100 mS
1S
10 S
dc
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71887
S-03950—Rev. B, 16-May-03