SI4942DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4942DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
40
r_DS(on) (W)
0.021 @ V_GS = 10 V
0.028 @ V_GS = 4.5 V
I_D (A)
7.4
6.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Low Power Synchronous Rectifier
D Automotive 12-V Systems
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4942DY
Si4942DY-T1 (with Tape and Reel)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
I_S
P_D
T_J, T_stg
40
"20
7.4
5.3
5.8
4.3
30
25
1.8
0.9
2.1
1.1
1.3
0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71887
S-03950—Rev. B, 16-May-03
Symbol
R_thJA
R_thJF
Typical
50
90
28
Maximum
60
110
34
Unit
_C/W
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