SI4942DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
1600
Capacitance
0.030
0.020
V_GS = 4.5 V
0.010
V_GS = 10 V
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 20 V
I_D = 5.7 A
8
6
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
1
T_J = 25_C
1280
C_iss
960
640
320
C_rss
C_oss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 7.4 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 7.4 A
0.04
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71887
S-03950—Rev. B, 16-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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