SI4941EDY Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si4941EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
I_D = 8.3 A
- 1.4
0.10
- 1.6
0.08
0.06
125 °C
0.04
25 °C
0.02
- 1.8
-2
- 2.2
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
50
40
30
20
10
0
10^{- 2}
10^{- 1}
1
10
Time (s)
100 600
Single Pulse Power
- 2.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Variance
100
Limited by r_DS(on)*
10
P(t) = 1 ms
P(t) = 10 ms
1
P(t) = 100 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
P(t) = 1 s
P(t) = 10 s
DC
100
* V_GS
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
www.vishay.com
4
Document Number: 74248
S-72693-Rev. B, 24-Dec-07