SI4941EDY Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 thru 4 V
24
24
Si4941EDY
Vishay Siliconix
18
18
12
3V
6
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.035
0.030
0.025
V_GS = 4.5 V
0.020
0.015
V_GS = 10 V
0.010
0.005
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1.4
V_GS = 10 V
I_D = 8.3 A
1.2
1.0
0.8
12
T_C = 125 °C
6
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
8
I_D = 8.3 A
6
V_DS = 15 V
I_D = 8.3 A
4
V_DS = 24 V
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
40
T_J = 150 °C
10
T_J = 25 °C
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74248
S-72693-Rev. B, 24-Dec-07
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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3