SI4941EDY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Dual P-Channel 30-V (D-S) MOSFET
Si4941EDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.021 at V_GS = - 10 V
- 30
0.031 at V_GS = - 4.5 V
I_D (A)
- 10^a
- 10^a
Q_g (Typ)
26 nC
FEATURES
• TrenchFET^® Power MOSFET
• ESD Protection: 2500 V
APPLICATIONS
• Load Switch for Portable Devices
• Battery and Load Switching for Notebooks
RoHS
COMPLIANT
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
D₂
7 kΩ
G₁
7 kΩ
G₂
Ordering Information: Si4941EDY-T1-E3 (Lead (Pb)-free)
S₁
S2
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
T_C = 25 °C
- 10^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 8.8
- 8.3^{b, c}
T_A = 70 °C
- 6.6^{b, c}
A
Pulsed Drain Current
I_DM
- 30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
-3
- 1.7^{b, c}
T_C = 25 °C
3.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.3
2^{b, c}
W
T_A = 70 °C
1.3^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, c}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W
Symbol
R_thJA
R_thJF
Document Number: 74248
S-72693-Rev. B, 24-Dec-07
Typical
45
26
Maximum
62.5
35
Unit
°C/W
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