SI4936DY Datasheet, PDF (4/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET

Si4936DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
SourceĆDrain Diode Forward Voltage
100
10
T_J = 150_C
1
0.1
T_J = 25_C
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
OnĆResistance vs. GateĆtoĆSource Voltage
0.09
0.08
0.07
0.06
0.05
I_D = 5.8 A
0.04
0.03
0.02
0.01
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
0.2
40
–0.0
I_D = 250 mA
30
–0.2
20
–0.4
10
–0.6
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.10
1.00
Time (sec)
Normalized Thermal Transient Impedance, JunctionĆtoĆAmbient
2
1
Duty Cycle = 0.5
10.00
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
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