SI4936DY Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET

Si4936DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
TEST CONDITION
STATIC
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^B
Drain-Source On-State Resistance^B
Forward Transconductance^B
Diode Forward Voltage^B
DYNAMIC^A
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5.8 A
V_GS = 4.5 V, I_D = 4.7 A
V_DS = 15 V, I_D = 5.8 A
I_S = 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
A. Pulse test; pulse width v 300 ms, duty cycle v 2%.
B. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 10 V, I_D = 5.8 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
MIN TYP^A MAX UNIT
1
V
"100
nA
1
mA
25
20
A
0.030 0.037
W
0.042 0.055
13
S
0.8
1.2
V
18
25
4.5
nC
2.5
10
16
10
16
27
40
ns
24
35
45
80
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
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