SI4936DY Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET

Si4936DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
24
24
18
4V
18
12
12
Transfer Characteristics
T_C = –55_C
25_C
125_C
6
2, 1 V
3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Drain Current
0.10
0.08
6
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
1250
Capacitance
C_iss
1000
0.06
V_GS = 4.5 V
0.04
V_GS = 10 V
750
500
C_oss
0.02
0
0
6
12
18
24
30
36
I_D – Drain Current (A)
250
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 15 V
8
I_D = 5.8 A
6
4
2
OnĆResistance vs. Junction Temperature
2.00
1.75
1.50
V_GS = 10 V
I_D = 5.8 A
1.25
1.00
0.75
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
0.5
–50 –25
0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-49532—Rev. D, 02-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
3-3