SI4910DY Datasheet, PDF (4/7 Pages) Vaishali Semiconductor – N-Channel 40-V (D-S) MOSFET

Si4910DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.15
I_D = 6 A
10
0.12
T_J = 150 C
1
0.09
T_J = 25 C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.06
0.03
T_A = 125 C
T_A = 25 C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
50
I_D = 250 µA
0.2
40
0.0 ^ID ^{= 5 mA}
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature ( C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
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4
10 Limited by R_DS(on)*
1 ms
1
10 ms
0.1
T_A = 25 C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09