SI4910DY Datasheet, PDF (3/7 Pages) Vaishali Semiconductor – N-Channel 40-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
V_GS = 10 V thru 3 V
16
1.6
Si4910DY
Vishay Siliconix
12
1.2
8
4
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.028
0.026
V_GS = 4.5 V
0.024
0.022
V_GS = 10 V
0.020
0.018
0
4
8
12
16
20
I_D – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
2
0.8
T_C = 125 C
0.4
25 C
- 55 C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
1400
1120
C_iss
840
560
280
C_rss
C_oss
0
0
8
16
24
32
40
V_DS – Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 5 A
1.7
1.4
1.1
V_GS = 4.5 V
V_GS = 10 V
0.8
0
0.0
4.4
8.8
13.2
17.6
22.0
Q_g – Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature ( C)
On-Resistance vs. Junction Temperature
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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