SI4910DY Datasheet, PDF (1/7 Pages) Vaishali Semiconductor – N-Channel 40-V (D-S) MOSFET

Dual N-Channel 40-V (D-S) MOSFET
Si4910DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.027 at V_GS = 10 V
40
0.032 at V_GS = 4.5 V
I_D (A)^a
6.0
4.8
Q_g (Typ.)
9.6
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free)
Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• CCFL Inverter
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 16
T_C = 25 °C
7.6
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6.0
6.0^{b, c}
T_A = 70 °C
4.8^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
I_DM
20
A
T_C = 25 °C
T_A = 25 °C
I_S
2.6
1.6^{b, c}
Pulsed Source-Drain Current
I_SM
20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
10
E_AS
5
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
W
2^{b, c}
T_A = 70 °C
1.28^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
Symbol
R_thJA
R_thJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
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