SI4884BDY-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4884BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
0.05
10
T_J = 150 °C
0.04
1
0.03
I_D = 10 A
0.1
T_J = 25 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.02
0.01
T_J = 25 °C
T_J = 125 °C
0.00
2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.3
80
I_D = 250 µA
0.0
60
- 0.3
40
- 0.6
20
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09