SI4884BDY-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
1.2
V_GS = 10 V thru 4 V
1.0
40
0.8
30
0.6
20
0.4
10
0
0.0
0.014
3V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
0.0
1.0
2000
0.012
1600
Si4884BDY
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1.4
1.8
2.2
2.6
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.010
0.008
V_GS = 4.5 V
V_GS = 10 V
1200
800
0.006
0.004
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 12 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
400
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 10 A
1.4
1.2
1.0
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
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