SI4884BDY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4884BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0090 at V_GS = 10 V
30
0.012 at V_GS = 4.5 V
I_D (A)^a
16.5
13.2
Q_g (Typ.)
10.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• PWM Optimized
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4884BDY-T1-E3 (Lead (Pb)-free)
Si4884BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
16.5
13.2
12.4^{b, c}
10.0^{b, c}
50
4.0
2.3^{b, c}
15
11
4.45
2.85
2.50^{b, c}
1.6^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
Typical
40
22
Maximum
50
28
Unit
°C/W
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