SI4825DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4825DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
Single Pulse Power, Junction-to-Ambient
50
0.8
40
0.6
I_D = 250 mA
30
0.4
0.2
29
0.0
10
–0.2
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–2
10^–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 68_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
www.vishay.com S FaxBack 408-970-5600
4
10^–2
10^–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71291
S-10679—Rev. A, 31-Jul-00