SI4825DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4825DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "25 V
V_DS = –24 V, V_GS = 0 V
V_DS = –24 V, V_GS = 0 V, T_J = 55_C
V_DS v –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –11.5 A
V_GS = –4.5 V, I_D = –9.2 A
V_DS = –15 V, I_D = –11.5 A
I_S = –2.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –15 V, V_GS = –10 V, I_D = –11.5 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –2.5 A, di/dt = 100 A/ms
Min
Typ
Max Unit
–1.0
V
"100
nA
–1
mA
–5
–50
A
0.012
0.014
W
0.018
0.022
28
S
–0.8
–1.2
V
55
71
15.5
nC
7.5
15
25
13
20
97
150
ns
51
75
45
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 5 V
4V
40
Transfer Characteristics
50
40
30
30
20
3V
10
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
20
T_C = 125_C
10
25_C
–55_C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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2
Document Number: 71291
S-10679—Rev. A, 31-Jul-00