SI4825DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4825DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
5000
Capacitance
0.020
V_GS = 4.5 V
0.015
0.010
V_GS = 10 V
0.005
0
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 11.5 A
8
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 11.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
12
24
36
48
60
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
I_D = 11.5 A
0.03
T_J = 25_C
0.02
0.01
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71291
S-10679—Rev. A, 31-Jul-00
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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