SI4820DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4820DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
0.08
10
T_J = 150_C
T_J = 25_C
0.06
I_D = 10 A
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
Single Pulse Power
80
0.2
I_D = 250 mA
60
- 0.0
- 0.2
40
- 0.4
- 0.6
20
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.10
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
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2-4
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70806
S-03950—Rev. F, 26-May-03