SI4820DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4820DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0135 @ V_GS = 10 V
0.020 @ V_GS = 4.5 V
I_D (A)
10
8
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4820DY
Si4820DY-T1 (with Tape and Reel)
DD DD
G
N-Channel MOSFET
S
SS
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current (10 ms Pulse Width)
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range (MOSFET and Schottky)
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
10
8
50
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70806
S-03950—Rev. F, 26-May-03
t v 10 sec
Steady State
Symbol
R_thJA
Typical
70
Maximum
50
Unit
_C/W
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