SI4820DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4820DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
1
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
20
V_GS = 10 V, I_D = 10 A
V_GS = 4.5 V, I_D = 5 A
V_DS = 15 V, I_D = 10 A
I_S = 2.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 5.0 V, I_D = 10 A
0.5
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.3 A, di/dt = 100 A/ms
Typ Max Unit
V
"100
nA
1
mA
25
A
0.0105 0.0135
W
0.0155 0.020
28
S
0.74
1.2
V
20
30
8
nC
7
1.6
W
15
30
8
15
45
90
ns
18
40
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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2-2
Document Number: 70806
S-03950—Rev. F, 26-May-03