SI4810BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4810BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.06
On-Resistance vs. Gate-to-Source Voltage
10
T_J = 150_C
1
T_J = 25_C
0.05
0.04
0.03
I_D = 9.0 A
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
30
10
1
0.1
0.01
0.001
Reverse Current (Schottky)
30 V
10 V
20 V
Single Pulse Power
50
40
30
20
10
0.0001
0
25
50
75
100 125 150
T_J - Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Case
100
Limited
by r_DS(on)
10
1
T_C = 25_C
0.1
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
4
1
10
Time (sec)
100
1000
Document Number: 72229
S-31063—Rev. A, 26-May-03