SI4810BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 5 V
40
40
Transfer Characteristics
30
4V
20
10
0
0
0.040
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.032
30
20
10
0
0
2500
2000
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Capacitance
C_iss (MOSFET)
0.024
0.016
0.008
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 10 A
4
3
2
1
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Document Number: 72229
S-31063—Rev. A, 26-May-03
1500
1000
500
C_oss (MOSFET + Schottky)
C_rss (MOSFET)
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 10 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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