SI4810BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4810BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
30
0.0135 @ V_GS = 10 V
0.020 @ V_GS = 4.5 V
I_D (A)
10
8
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
Diode Forward Voltage
V_SD (V)
0.53 V @ 3.0 A
I_F (A)
3.8
SO-8
FEATURES
D TrenchFETr Power MOSFETS
D Fast Switching Speed
D Low Gate Charge
APPLICATIONS
D DC-DC Logic Level
D Low Voltage and Battery Powered
Applications
D
S1
S2
S3
G4
Top View
8D
7D
Ordering Information:
6 ^{D Si4810BDY}
Si4810BDY-T1 (with Tape and Reel)
5D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
30
V_DS
30
Gate-Source Voltage (MOSFET)
V_GS
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)^a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
10
7.5
8
6
50
2.3
1.25
3.8
2.4
40
2.5
1.38
1.6
0.88
2.0
1.31
1.3
0.84
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Maximum Junction-to-Ambient (t v 10 sec)^a
Maximum Junction-to-Ambient (t = steady state)^a
Maximum Junction-to-Foot (t = steady state)^a
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
R_thJA
R_thJF
Notes
a. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72229
S-31063—Rev. A, 26-May-03
Typical
36
44
73
77
17
24
Maximum
50
60
90
95
21
30
Unit
_C/W
www.vishay.com
1