SI4778DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

Si4778DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
I_D = 7 A
0.06
T_J = 150 °C
10
T_J = 25 °C
0.04
T_A = 125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
1.8
I_D = 250 µA
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.02
T_A = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100
Time (s)
Single Pulse Power
1000
10
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09