SI4778DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
V_GS = 10 thru 4 V
24
8
Si4778DY
Vishay Siliconix
18
V_GS = 3 V
12
6
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.035
0.030
0.025
0.020
V_GS = 10 V
V_GS = 4.5 V
0.015
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 7 A
8
V_DS = 13 V
6
V_DS = 24 V
4
6
T_C = - 55 °C
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
900
750
C_iss
600
450
300
C_oss
150
C_rss
0
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 7 A
1.4
V_GS = 10 V, 4.5 V
1.2
1.0
2
0.8
0
0
3
6
9
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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