SI4778DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

N-Channel 25-V (D-S) MOSFET
Si4778DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.023 at V_GS = 10 V
25
0.028 at V_GS = 4.5 V
I_D (A)
8^a
8^a
Q_g (Typ.)
5.5 nC
SO-8
S1
S2
S3
G4
Top View
8_D
7D
6D
5D
Ordering Information: Si4778DY-T1-E3 (Lead (Pb)-free)
Si4778DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• DC/DC Converter
• Gaming
• Notebook System Power
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V
V_GS
± 16
T_C = 25 °C
8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
8^a
8^{a, b, c}
Pulsed Drain Current
T_A = 70 °C
6.4^{b, c}
A
I_DM
30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
4.2
2^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
5
Single Pulse Avalanche Energy
E_AS
1.25
mJ
T_C = 25 °C
5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.2
2.4^{b, c}
W
T_A = 70 °C
1.5^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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