SI4638DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4638DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.020
10
T_J = 150 °C
0.016
I_D = 15 A
1
0.1
0.01
T_J = 25 °C
0.012
0.008
0.004
T_J = 125 °C
T_J = 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
300
10^-2
240
30 V
10-3
180
20 V
10-4
10 V
120
10-5
60
10-6
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
0.01
0.01
0.1
DC
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 68745
S09-0764-Rev. B, 04-May-09