SI4638DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4638DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0065 at V_GS = 10 V
0.008 at V_GS = 4.5 V
I_D (A)^a
22.4
20.2
Q_g (Typ.)
27.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET^® Monolithic TrenchFET^® Power
MOSFET and Schottky Diode
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4638DY-T1-E3 (Lead (Pb)-free)
Si4638DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook System Power
• DC/DC Conversion
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
22.4
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
18
16^{b, c}
Pulsed Drain Current
T_A = 70 °C
12.7^{b, c}
A
I_DM
70
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5.3
2.7^{b, c}
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
T_C = 25 °C
5.9
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.8
W
3^{b, c}
T_A = 70 °C
1.9^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
R_thJA
33
Steady State
R_thJF
16
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Max.
42
21
Unit
°C/W
Document Number: 68745
S09-0764-Rev. B, 04-May-09
www.vishay.com
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