SI4638DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
1.2
V_GS = 10 V thru 4 V
1.0
64
0.8
48
0.6
32
0.4
16
0
0.0
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
0.0
0
0.0080
5000
0.0074
V_GS = 4.5 V
4000
Si4638DY
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0068
3000
0.0062
0.0056
V_GS = 10 V
0.0050
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 15 V
2
2000
1000
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 15 A
1.5
V_GS = 10 V
1.3
1.1
V_GS = 4.5 V
0.9
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68745
S09-0764-Rev. B, 04-May-09
www.vishay.com
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