SI4567DY Datasheet, PDF (4/12 Pages) Vaishali Semiconductor – Dual N- and P-Channel 40-V (D-S) MOSFET

Si4567DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
V_GS = 10 thru 4 V
16
12
3V
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
T_C = 125 ˚C
25 ˚C
- 55 ˚C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.07
0.06
0.05
V_GS = 4.5 V
V_GS = 10 V
0.04
0.03
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
550
500
450
400
350
300
250
200
150
100
50
0
0
C_iss
C_rss
C_oss
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.1
I_D = 5 A
1.8
V_GS = 4.5 V
1.5
V_GS = 10 V
1.2
2
0.9
0
0.0
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4
2.5
5.0
7.5
10.0
12.5
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09