SI4567DY Datasheet, PDF (1/12 Pages) Vaishali Semiconductor – Dual N- and P-Channel 40-V (D-S) MOSFET

Si4567DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
N-Channel
V_DS (V)
R_DS(on) (Ω)
40
0.060 at V_GS = 10 V
0.070 at V_GS = 4.5 V
- 40 ^{0.085 at VGS = - 10 V}
0.122 at V_GS = - 4.5 V
I_D (A)^a
5.0
4.7
- 4.4
- 3.7
Q_g (Typ.)
5.6
6
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free)
Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• CCFL Inverter
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
- 40
V
V_GS
± 16
T_C = 25 °C
5
- 4.4
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
4.7
4.1^{b, c}
- 3.7
- 3.6^{b, c}
T_A = 70 °C
3.3^{b, c}
- 2.9^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
I_DM
20
- 20
A
Source-Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.3
1.5^{b, c}
- 2.5
- 1.6^{b, c}
Pulsed Source-Drain Current
I_SM
20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
7
E_AS
2.5
12
7.2
mJ
T_C = 25 °C
2.75
2.95
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.75
1.85^{b, c}
1.90
W
1.95^{b, c}
T_A = 70 °C
1.18^{b, c}
1.25^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
Typ.
Max.
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
R_thJA
57
67.5
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
35
45
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
P-Channel
Typ.
Max.
54
64
33
42
Unit
°C/W
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