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SI4544DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET | |||
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Si4544DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.12
10
0.09
ID = 6.5 A
TJ = 150_C
0.06
TJ = 25_C
0.03
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.6
ID = 250 mA
0.3
0.0
0.00
1
40
32
24
3
5
7
9
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
â0.3
16
â0.6
8
â0.9
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10â4
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 52_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70768
S-56944âRev. C, 23-Nov-98
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