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SI4544DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
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Si4544DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS = –30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS w –5 V, VGS = –10 V
VDS w 5 V, VGS = 4.5 V
VDS w –5 V, VGS = –4.5 V
VGS = 10 V, ID = 6.5 A
VGS = –10 V, ID = –5.7 A
VGS = 4.5 V, ID = 5.4 A
VGS = –4.5 V, ID = –4.0 A
VDS = 15 V, ID = 6.5 A
VDS = –15 V, ID = – 5.7 A
IS = 1.7 A, VGS = 0 V
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 6.5 A
Qgs
P-Channel
VDS = –15 V, VGS = –10 V, ID = –5.7 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
IF = –1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com S FaxBack 408-970-5600
2
Min Typ Max Unit
N-Ch
1.0
V
P-Ch –1.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
–1
mA
5
P-Ch
–5
N-Ch
20
P-Ch
–20
A
N-Ch
5
P-Ch
–5
N-Ch
0.027 0.035
P-Ch
N-Ch
0.036 0.045
W
0.038 0.050
P-Ch
0.060 0.090
N-Ch
15
S
P-Ch
9
N-Ch
P-Ch
0.75
1.2
V
–0.75 –1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
18
35
19
40
4.2
nC
4.5
3.5
3.6
13
30
13
30
12
30
15
30
31
60
ns
37
70
10
30
14
30
30
70
35
70
Document Number: 70768
S-56944—Rev. C, 23-Nov-98
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