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SI4544DY Datasheet, PDF (3/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
Si4544DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 10 thru 5 V
4V
16
16
N-CHANNEL
Transfer Characteristics
12
12
8
4
0
0
0.06
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0.00
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
10
VDS = 15 V
8
ID = 6.5 A
6
4
2
0
0
4
8
12
16
20
Qg – Total Gate Charge (nC)
8
4
0
0
1500
1200
TC = 125_C
25_C
–55_C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Capacitance
Ciss
900
600
Coss
300
Crss
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 10 V
ID = 6.5 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0 25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70768
S-56944—Rev. C, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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