SI4472DY-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
10
T_J = 150 °C
0.16
I_D = 5 A
1
0.12
0.1
T_J = 25 °C
0.08
T_J = 25 °C
0.01
0.04
T_J = 125 °C
0.001
0
1.0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.0
I_D = 5 mA
- 0.5
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
- 1.0
40
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature ( C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.1
1s
T_A = 25 °C
Single Pulse
10 s
0.01
DC
0.01
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11