SI4472DY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET
Si4472DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
150
R_DS(on) (Ω)
0.045 at V_GS = 10 V
0.047 at V_GS = 8 V
I_D (A)^a
7.7
7.5
Q_g (Typ.)
23 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free)
Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q_gd for Switching Losses
• 100 % R_g Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
150
V
V_GS
± 20
T_C = 25 °C
7.7
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6.1
5.5^{b, c}
Pulsed Drain Current
T_A = 70 °C
4.5^{b, c}
A
I_DM
50
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
4.5
2.6^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
20
Single Pulse Avalanche Energy
E_AS
20
mJ
T_C = 25 °C
5.9
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.8
3.1^{b, c}
W
T_A = 70 °C
2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Typical
33
17
Maximum
40
21
Unit
°C/W
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