SI4472DY-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
1.2
V_GS = 10 V thru 7 V
48
V_GS = 6 V
36
24
12
V_GS = 5 V
0.9
T_C = 125 °C
0.6
T_C = 25 °C
0.3
T_C = - 55 °C
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.055
2000
0.051
1600
C_iss
0.047
0.043
0.039
V_GS = 8 V
V_GS = 10 V
0.035
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 50 V
V_DS = 75 V
6
V_DS = 100 V
4
1200
800
400
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.5
I_D = 5 A
2.1
V_GS = 10 V
1.7
V_GS = 8 V
1.3
2
0.9
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
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