SI4470EY_10 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0
60
0.6
50
I_D = 250 µA
0.2
40
- 0.2
30
- 0.6
20
- 1.0
10
- 1.4
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71606.
www.vishay.com
4
Document Number: 71606
S10-2137-Rev. D, 20-Sep-10