SI4470EY_10 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
4000
0.015
0.010
V_GS = 6 V
V_GS = 10 V
3500
3000
C_iss
2500
2000
1500
0.005
0.000
0
10
20
30
40
50
1000
500
C_oss
0 ^Crss
0
15
30
45
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 30 V
I_D = 5 A
8
6
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
2.1
V_GS = 10 V
1.8
I_D = 5 A
1.5
1.2
0.9
0.6
0.3
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.10
0.08
T_J = 150 °C
T_J = 25 °C
0.06
10
0.04
I_D = 5 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71606
S10-2137-Rev. D, 20-Sep-10
www.vishay.com
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