SI4470EY_10 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET
Si4470EY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
60
0.011 at V_GS = 10 V
0.013 at V_GS = 6.0 V
I_D (A)
12.7
11.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
SO-8
S1
8D
S2
7D
G
S3
6D
G4
5D
Top View
Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free)
Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
12.7
9.0
10.6
7.5
Pulsed Drain Current
I_DM
50
A
Avalanche Current
L = 0.1 mH
I_AS
50
Continuous Source Current (Diode Conduction)^a
I_S
3.1
1.5
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.75
1.85
2.6
1.3
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t  10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
65
17
Maximum
40
80
21
Unit
°C/W
Document Number: 71606
S10-2137-Rev. D, 20-Sep-10
www.vishay.com
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