SI4463BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

Si4463BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Junction-to-Ambient
50
0.4
40
I_D = 250 mA
0.2
30
0.0
20
−0.2
10
−0.4
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.01
0.1
100
r_DS(on) Limited
10
Safe Operating Area
I_DM Limited
P(t) = 0.001
I_D(on)
1 ^Limited
P(t) = 0.01
P(t) = 0.1
0.1
T_C = 25_C
Single Pulse
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
1
10
Time (sec)
100
600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72789
S-40433—Rev. A, 15-Mar-04