SI4463BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
P-Channel 2.5-V (G-S) MOSFET
Si4463BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.011 @ V_GS = −10 V
−20
0.014 @ V_GS = −4.5 V
0.020 @ V_GS = −2.5 V
I_D (A)
−13.7
−12.3
−10.3
S
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4463BDY—E3 (Lead Free)
Si4463BDY-T1—E3 (Lead Free with Tape and Reel)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−20
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
−13.7
−9.8
−11.1
−7.9
−50
−2.7
−1.36
3.0
1.5
1.9
0.95
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
35
70
17
Maximum
42
84
21
Unit
_C/W
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