SI4463BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
5000
Capacitance
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 13.7 A
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
4000
C_iss
3000
2000
1000
0
0
C_oss
C_rss
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 10 V
1.3
I_D = 13.7 A
1.2
1.1
1.0
0.9
0.8
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
I_D = 5 A
0.04
I_D = 13.7 A
0.03
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
0.00
0
1
2
3
4
5
6
7
8
V_GS − Gate-to-Source Voltage (V)
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