SI4456DY Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

Si4456DY
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
0.020
10
T_A = 150 °C
1
0.016
0.012
0.1
T_A = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.008
T_A = 125 °C
0.004
T_A = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
- 0.1
120
I_D = 5 mA
- 0.4
80
I_D = 250 µA
- 0.7
40
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09