SI4456DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
70
1.2
V_GS = 10 V thru 4 V
56
0.9
42
0.6
28
0.3
14
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0045
0.0
0
7000
0.0041
0.0037
V_GS = 4.5 V
5600
4200
Si4456DY
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0033
0.0029
V_GS = 10 V
0.0025
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 10 V
6
V_DS = 20 V
V_DS = 30 V
4
2800
1400
C_oss
0 ^Crss
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V, I_D = 20 A
1.4
1.2
V_GS = 4.5 V, I_D = 20 A
1.0
2
0.8
0
0
17
34
51
68
85
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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