SI4456DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET
Si4456DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
40
R_DS(on) (Ω)
0.0038 at V_GS = 10 V
0.0045 at V_GS = 4.5 V
I_D (A)^a
33
31
Q_g (Typ.)
37.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Gen II Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Secondary Rectification
• Point of Load
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
D
G
Top View
Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free)
Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
40
± 20
33
27
23^{b, c}
18^{b, c}
70
7.0
3.0^{b, c}
40
80
7.8
5.0
3.5^{b, c}
2.2^{b, c}
- 55 to 150
Unit
V
A
mJ
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 80 °C/W.
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
Symbol
R_thJA
R_thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
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