SI4448DY Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

Si4448DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.010
10
T_J = 150 °C
T_J = 25 °C
1
0.008
0.006
I_D = 20 A
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0.004
0.002
T_A = 125 °C
T_A = 25 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.1
- 0.1
I_D = 5 mA
- 0.3
I_D = 250 µA
- 0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
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4
100 ms
1
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09