SI4448DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
2.0
V_GS = 5 thru 1.5 V
56
1.6
Si4448DY
Vishay Siliconix
42
28
14
1V
0
0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0025
0.0022
V_GS = 1.8 V
1.2
T_C = 25 °C
0.8
T_C = 125 °C
0.4
0.0
0
T_J = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
16 000
C_iss
12 800
0.0019
0.0016
V_GS = 2.5 V
V_GS = 4.5 V
0.0013
0.0010
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4.5
I_D = 10 A
3.6
V_DS = 4 V
V_DS = 6 V
2.7
V_DS = 8 V
1.8
0.9
9600
6400
3200
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 20 A
1.3
V_GS = 1.8 V
1.1
V_GS = 4.5 V
0.9
0.0
0
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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