SI4448DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

N-Channel 12-V (D-S) MOSFET
Si4448DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0017 at V_GS = 4.5 V
12
0.002 at V_GS = 2.5 V
0.0027 at V_GS = 1.8 V
I_D (A)^a
50
46
40
Q_g (Typ.)
56 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free)
Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• POL
• DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
12
V
V_GS
±8
T_C = 25 °C
50
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
40
32^{b, c}
Pulsed Drain Current
T_A = 70 °C
26^{b, c}
A
I_DM
70
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
7
3^{b, c}
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
20
E_AS
20
mJ
T_C = 25 °C
7.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
5.0
3.5^{b, c}
W
T_A = 70 °C
2.2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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